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SSM3K119TU
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
SSM3K119TU
Power Management Switch Applications High Speed Switching Applications
* * * 1.8 V drive Low ON-resistance: Unit: mm Ron = 134 m (max) (@VGS = 1.8V) Ron = 90 m (max) (@VGS = 2.5V) Ron = 74 m (max) (@VGS = 4.0V)
2.00.1 2.10.1 1.70.1 0.650.05 +0.1 0.3 -0.05 3 0.1660.05
Absolute Maximum Ratings (Ta = 25C)
Characteristic Drain-source voltage Gate-source voltage Drain current Drain power dissipation Channel temperature Storage temperature range DC Pulse Symbol VDS VGSS ID IDP PD (Note 1) PD (Note 2) Tch Tstg Rating 30 12 2.5 5.0 800 500 150 -55~150 Unit V V
1 2
mW C C
0.70.05
A
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Mounted on a ceramic board. 2 (25.4 mm x 25.4 mm x 0.8 t, Cu Pad: 645 mm ) Note 2: Mounted on an FR4 board. 2 (25.4 mm x 25.4 mm x 1.6 t, Cu Pad: 645 mm )
Note:
1: Gate 2: Source 3: Drain UFM JEDEC JEITA TOSHIBA 2-2U1A
Weight: 6.6 mg (typ.)
Electrical Characteristics (Ta = 25C)
Characteristic Drain-source breakdown voltage Drain cutoff current Gate leakage current Gate threshold voltage Forward transfer admittance Symbol V (BR) DSS V (BR) DSX IDSS IGSS Vth Yfs RDS (ON) Ciss Coss Crss ton toff VDSF Test Condition ID = 1 mA, VGS = 0 ID = 1 mA, VGS = -12 V VDS = 30 V, VGS = 0 VGS = 12 V, VDS = 0 VDS = 3 V, ID = 1 mA VDS = 3 V, ID = 2 A ID = 2.0 A, VGS = 4.0 V Drain-source ON-resistance ID = 1.0 A, VGS = 2.5 V ID = 0.5 A, VGS = 1.8 V Input capacitance Output capacitance Reverse transfer capacitance Switching time Turn-on time Turn-off time VDS = 10 V, VGS = 0, f = 1 MHz VDS = 10 V, VGS = 0, f = 1 MHz VDS = 10 V, VGS = 0, f = 1 MHz VDD = 10 V, ID = 2 A, VGS = 0 to 2.5 V, RG = 4.7 ID = - 2.5 A, VGS = 0 V (Note3) (Note3) (Note3) (Note3) (Note3) Min 30 18 0.4 3.8 Typ. 7.7 55 67 84 270 56 47 20 31 - 0.85 Max 1 1 1.0 74 90 134 - 1.2 pF pF pF ns V m Unit V V A A V S
Drain-source forward voltage
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SSM3K119TU
Note3: Pulse test
Switching Time Test Circuit
(a) Test Circuit (b) VIN
OUT IN 0V RG 10 s VDD = 10 V RG = 4.7 D.U. < 1% = VIN: tr, tf < 5 ns Common Source Ta = 25C 10% 2.5 V 90%
2.5 V 0
VDD
(c) VOUT
VDD
10% 90% tr ton tf toff
VDS (ON)
Marking
3
Equivalent Circuit (top view)
3
KKA
1 2 1 2
Notice on Usage
Vth can be expressed as the voltage between gate and source when the low operating current value is ID = 1 mA for this product. For normal switching operation, VGS (on) requires a higher voltage than Vth and VGS (off) requires a lower voltage than Vth. (The relationship can be established as follows: VGS (off) < Vth < VGS (on).) Take this into consideration when using the device.
Handling Precaution
When handling individual devices that are not yet mounted on a circuit board, make sure that the environment is protected against electrostatic discharge. Operators should wear antistatic clothing, and containers and other objects that come into direct contact with devices should be made of antistatic materials.
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SSM3K119TU
ID - VDS
5 10 V 4.0 V 2.5 V 10 Common Source VDS = 3 V 1
ID - VGS
(A)
4 1.8 V 3
ID
ID
(A)
Drain current
Drain current
0.1
2 VGS = 1.5 V 1 Common Source Ta = 25C 0 0 0.2 0.4 0.6 0.8 1
0.01
Ta = 100 C 25 C - 25 C
0.001
0.0001 0
1.0
2.0
Drain-source voltage
VDS
(V)
Gate-source voltage
VGS
(V)
RDS (ON) - VGS
200 ID = 0.5 A 200
RDS (ON) - ID
Common Source Ta = 25C
Drain-source ON-resistance RDS (ON) (m)
Common Source 150 Ta = 25C
Drain-source ON-resistance RDS (ON) (m)
150
100 Ta = 100 C 50 25 C - 25 C 0
100
1.8 V 2.5 V
50
VGS = 4.0 V
0
2
4
6
8
10
0
0
1
2
3
4
5
Gate-source voltage
VGS
(V)
Drain current
ID
(A)
RDS (ON) - Ta
300 1.0
Vth - Ta Vth (V)
0.5 A / 1.8 V 1.0 A / 2.5 V
Common Source
Drain-source on-resistance RDS (ON) (m)
250
200
Gate threshold voltage
150
0.5
100 ID = 2.0 A / VGS = 4.0 V
50
Common source VDS = 3 V ID = 1 mA 0 -50 0 50 100 150
0 -50
0
50
100
150
Ambient temperature
Ta
(C)
Ambient temperature
Ta
(C)
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SSM3K119TU
10
|Yfs| - ID
IDR - VDS
10 Common Source VGS = 0 V 1 Ta = 25C
(S)
D IDR S
Yfs
IDR
3
(A)
G
Forward transfer admittance
1
Drain reverse current
0.1 Ta =100 C
0.3
Common Source VDS = 3 V Ta = 25C
0.01
25 C
-25 C 0.001 0 -0.2 -0.4 -0.6 -0.8 -1.0
0.1 0.01
0.1
1
10
Drain current
ID
(A)
Drain-source voltage
VDS
(V)
1000
C - VDS
1000
t - ID
Common Source VDD = 10 V VGS = 0 to 2.5 V Ta = 25C RG = 4.7
500
(pF)
toff Ciss
300
(ns)
100
C
tf
100
50 30
Switching time
Capacitance
t
Common Source Ta = 25C f = 1 MHz VGS = 0 V 10
Coss Crss
ton tr
10 0.1
1
10
100
1 0.01
0.1
1
10
Drain-source voltage
VDS
(V)
Drain current
ID
(A)
PD - Ta
1000 a: Mounted on an FR4 board 600
t - Rth
2 2
(mW)
(25.4 x 25.4 x 0.8 mm
Cu Pad : 645 mm )
800
Drain Power Dissipation
PD
b
Transient thermal impedance Rth (C/W)
PD - b: Mounted on a ceramic board
(25.4 x 25.4 x 1.6 mm
Cu Pad : 645 mm )
Ta
c b a
100
600
a
400
10
200
a: Mounted on a ceramic board b: Mounted on an FR4 board 1
(25.4 x 25.4 x 0.8 mm
Cu Pad : 645 mm )
2
2
(25.4 x 25.4 x 1.6 mm Cu Pad : 645 mm ) c: Mounted on an FR4 board 2 (25.4 x 25.4 x 1.6 mm Cu Pad : 0.36 mm x 3)
0 -40
-20
0
20
40
60
80
100 120 140 160
0.001
0.01
0.1
1
10
100
600
Ambient temperature
Ta
(C)
Pulse Width
tw (s)
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SSM3K119TU
RESTRICTIONS ON PRODUCT USE
* The information contained herein is subject to change without notice.
20070701-EN GENERAL
* TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc. * The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer's own risk. * The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. * The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. * Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations.
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2007-11-01

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